| Process Application | Typical Gases or Liquid Precursors Used |
|---|---|
| Plasma Etch | |
| Metal Etch | Cl2, BCl3, HCl, CF4, SF6 |
| Silicon Etch | Cl2, HBr, SF6, CF4, NF3, C4F8 |
| Oxide Etch | CF4, CHF3, C2F6, C3F8, C4F8, CH2F2, NF3 |
| Nitride Etch | Cl2, O2, SF6 |
| Tungsten Etchback | SF6 |
| Ion Implantation | |
| High, Medium, Low | AsH3, PH3, BF3, P, As, Sb, Sb(CH3)3 |
| ALD-LPCVD-PECVD | |
| TEOS, undoped | TEOS, O2, O3 |
| BPSG | TEOS, O3, TMP, TMB, SiH4, PH3, B2H6 |
| Poly-Si | SiH4 |
| As-doped poly-Si | SiH4, AsH3 |
| Oxide | SiH4, O2 |
| Nitride, undoped | SiH4, NH3, DCS |
| Nitride, doped | SiH4, NH3, TMP, TMB, SiH4, PH3, B2H6 |
| Oxynitride, undoped | SiH4, NH3, N2O |
| Oxynitride, doped | SiH4, NH3, N2O, TMP, TMB, SiH4, PH3, B2H6 |
| Low-k dielectrics | 1MS, 2MS, 3MS, 4MS, DMDMOS |
| Copper CVD | Cu(hfac)(TMVS) |
| Tungsten | WF6, SiH4, H2 |
| Tungsten silicide | WF6, SiH4, H2, DCS |
| Titanium | TiCl4 |
| Titanium nitride | TiCl4, NH3, TDMAT |
| Tantalum nitride | PDMATa, PDEATa |
| Tantalum oxyde | TAETO |
| Tungsten nitride | W(CO)6, NH3 |
| HDPCVD, undoped | SiH4, O2, Ar |
| HDPCVD, doped | SiH4, O2, Ar, TMP, TMB, PH3, B2H6 |
| PECVD Clean | |
| PFC plasma | C2F6, C4F8, NF3 |
| Remote NF3 plasma | F2 |
| Epitaxy | |
| Silicon | DCS, TCS, SiH4, AsH3, PH3, B2H6, HCl |
| Silicon-Germanium | SiH4, GeH4, CBr4, 1MS, 2MS, 3MS, HCl |
| Compound Semiconductors | |
| InP OMVPE (MOCVD) | TMIn, PH3, TBP |
| GaAs OMVPE (MOCVD) | TMGa, AsH3, TBA |
| GaN OMVPE (MOCVD) | TMGa, NH3, UDMH |
| MBE (MOMBE) | As, P, AsH3, PH3 |
| III-V Etch | Cl2, BCl3, HBr, SiF4, SF6, CH4, O2 |
Application List
Abatement with CLEANSORB Dry Bed Absorbers
Abatement with CLEANSORB Dry Bed Absorbers