| Chemical Formula | Chemical Name | Film | Application |
|---|---|---|---|
| Al(CH3)3 | TMA | Al2O3 | ALD high-k Gate Oxide, Capacitor |
| Hf[N(CH3)(C2H5)]4 | TEMAH | HfO2 | ALD high-k Gate Oxide |
| Hf[N(CH3)2]4 | TDMAH | HfO2 | ALD high-k Gate Oxide |
| Hf[N(C2H5)2]4 | TDEAH | HfO2 | ALD high-k Gate Oxide |
| Ta(OC2H5)5 | TAETO, PET | Ta2O5 | ALD high-k Capacitor |
| TiCl4 | TiCl4 | TiN | ALD, CVD Barrier/Liner |
| Ti[N(CH3)2]4 | TDMAT | TiN | ALD, CVD Barrier/Liner |
| Ti[N(C2H5)2]4 | TDEAT | TiN | ALD, CVD Barrier/Liner |
| Si2Cl6, C5H5N | HCDS/ Pyridine | SiN | ALD, CVD Spacer, Capacitor |
| SiCl4, C5H5N | SiCl4/ Pyridine | SiN | ALD, CVD Spacer, Capacitor |
| C4H8NCH3•AlH3 | MPA (1-Methylpyrrolidine Alane) | Al | ALD Gate Electrode |
| Ru(C2H5C5H4)2 | Ru(Etcp)2 | RuO2 | ALD Gate Electrode |
| Ta[N(C2H5)(CH3)]5 | PEMAT | TaN | ALD Gate Electrode |
| Ta[N(C2H5)2]3NC(CH3)3 | Tantalum tris(diethylamino)- | TaN | ALD Gate Electrode |
| Al(CH3)3 | TMA | AlGaAs, InAlGaP, AlGaN, InAlAs | MOCVD |
| Ga(CH3)3 | TMGa | GaAs, AlGaAs, InAlGaP, AlGaN | MOCVD |
| AsH2(C4H9) | TBA Tertiary Butylarsine | Dopant | MOCVD |
| PH2(C4H9) | TBP Tertiary Butylphosphine | Dopant | MOCVD |
| (CH3)2N-NH2 | UDMH | GaInAsN, GaAsN | MOCVD |
| Si(OCH2CH3)4 | TEOS | SiO2 | CVD Dielectric |
| B(OCH)3 | TMB | Dopant | CVD Dielectric |
| PO(OCH3)3 | TMOP | Dopant | CVD Dielectric |
| (C4H9NH)2SiH2 | BTBAS (Bis(tertiary-butylamino) silane) | SiNx | CVD Barrier |
| Si(CH3)4 | 4MS | SiCxOy | CVD low-k |
| [CH3SiOH]4 | TMCTS | SiCxOy | CVD low-k |
| [(CH3)2SiO]4 | OMCTS, D4 | SiCxOy | CVD low-k |
| Si(CH3)2(OCH3)2 | DMDMOS Aurora I | SiCxOy | CVD low-k |
| SiH(CH3)3 | TMS, 3MS | SiCxOy | CVD low-k |
| (CH3)2(CH3O)SiO- | TMDMODSO, Aurora II | SiCxOy | CVD low-k |
| (CH3)2(CH3O)SiO- | HMDMOTSO,1,5-Dimethoxyhexa- | SiCxOy | CVD low-k |
| Si3H8 | Trisilane, Silcor® | Si | Epitaxy |
Application List Liquid Precursor Supply Systems


