Latest-generation materials required for deposition of low-k and high-k dielectrics, barrier layers and metallization, generally require ultra-high purity (UHP) precursors in liquid form. At the present technology node, for example, compounds of aluminium, hafnium and zirconium are used in the CVD deposition of high-k layers.

Before an empty canister of liquid precursor can be removed from the supply cabinet, the connectors must first be purged free of any residual chemical. Conventionally, this has been achieved by pump and purge procedures, whereby the dead volume is subjected to repeated cycles of inert gas pressurization followed by evacuation.

However, this technique is too time-consuming to remove low vapor-pressure chemicals down to acceptable residual levels. The use of liquid solvent rinsing instead of inert gas purge markedly improves cleansing efficiency, and accelerates canister change-out time significantly.

The advantage is most pronounced on chemicals which are hydrolysis-sensitive and prone to oxide formation on contact with air or moisture. In applications where the precursor is a solid dissolved in liquid solution, the use of solvent rinsing is mandatory.
This is a key processing benefit of the TRICHEM Liquid Delivery System.

The TRICHEM Delivery System assures a safe and consistent supply of UHP liquid precursor to a CVD (Chemical Vapor Deposition) or ALD (Atomic Layer Deposition) tool, enabling it to stay up-and-running for prolonged production cycles without interruption.